标题: | On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs |
作者: | Dai, Chih-Hao Chang, Ting-Chang Chu, An-Kuo Kuo, Yuan-Jui Jian, Fu-Yen Lo, Wen-Hung Ho, Szu-Han Chen, Ching-En Chung, Wan-Lin Shih, Jou-Miao Xia, Guangrui Cheng, Osbert Huang, Cheng-Tung 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | EVB tunneling;gate-induced floating-body effect (GIFBE);negative-bias temperature instability (NBTI);silicon-on-insulator (SOI) |
公开日期: | 1-七月-2011 |
摘要: | This letter systematically investigates the origin of gate-induced floating-body effect (GIFBE) in partially depleted silicon-on-insulator p-type MOSFETs. The experimental results indicate that GIFBE causes a reduction in the electrical oxide field, leading to an underestimate of negative-bias temperature instability degradation. This can be partially attributed to the electrons tunneling from the process-induced partial n(+) polygate. However, based on different operation conditions, we found that the dominant origin of electrons was strongly dependent on holes in the inversion layer under source/drain grounding. This suggests that the mechanism of GIFBE at higher voltages is dominated by the proposed anode electron injection model, rather than the electron valence band tunneling widely accepted as the mechanism for n-MOSFETs. |
URI: | http://dx.doi.org/10.1109/LED.2011.2142412 http://hdl.handle.net/11536/22109 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2011.2142412 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 32 |
Issue: | 7 |
起始页: | 847 |
结束页: | 849 |
显示于类别: | Articles |
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