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dc.contributor.authorCheng, Shiau-Shinen_US
dc.contributor.authorRamesh, Mohanen_US
dc.contributor.authorChen, Guan-Yuanen_US
dc.contributor.authorFung, Chun-Linen_US
dc.contributor.authorChen, Li-Mingen_US
dc.contributor.authorWu, Meng-Chyien_US
dc.contributor.authorLin, Hong-Cheuen_US
dc.contributor.authorChu, Chih-Weien_US
dc.date.accessioned2014-12-08T15:31:01Z-
dc.date.available2014-12-08T15:31:01Z-
dc.date.issued2013-09-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2013.05.018en_US
dc.identifier.urihttp://hdl.handle.net/11536/22111-
dc.description.abstractOrganic vertical-type triodes (OVTs) based on the cascade energy band structure as emitter layer are studied. The electric characteristics were dramatically enhanced while incorporating the cascade energy under current driving and voltage driving modes. The improvement is attributed to that injection carriers can obtain higher energy through a stepwise energy level. When the device has a layered structure of F16CuPC (10 nm)/PTCDI (10 nm)/pentacene (100 nm) in emitter, it exhibits a common-base transport factor of 0.99 and a common-emitter current gain of 225 under current driving mode and exhibits a high current modulation-exceeding -520 mu A for a low collector voltage of -5 V and a base voltage of -5 V and the current on/off ratio of 10(3) under voltage driving mode. Furthermore, we realized first organic current mirror that exhibited out/in current ratio of 0.75 and output resistance of 10(5) Omega by using the OVTs. (C) 2013 Published by Elsevier B.V.en_US
dc.language.isoen_USen_US
dc.subjectOrganic semiconductoren_US
dc.subjectVertical-type transistoren_US
dc.subjectCascade-typeen_US
dc.subjectTransport factoren_US
dc.subjectCurrent gainen_US
dc.subjectCurrent mirroren_US
dc.titleA cascade energy band structure enhances the carrier energy in organic vertical-type triodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2013.05.018en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume14en_US
dc.citation.issue9en_US
dc.citation.spage2284en_US
dc.citation.epage2289en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000321046700027-
dc.citation.woscount1-
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