標題: | Electron Transport Properties of ZnO, InP, GaP, and Pb(1-x)Mn(x)Se Nanowires By Two-Probe Measurements |
作者: | Lin, Yen-Fu Jiye-Fang Jian, Wen-Bin 電子物理學系 Department of Electrophysics |
公開日期: | 2010 |
摘要: | Nanowires (NWs) of four different materials, including ZnO, InP, GaP, and Pb(1-x)Mn(x)Se, have been used for the fabrication of two-probe electronic devices to study electrical transport properties. The average diameters of ZnO, InP, GaP, and Pb(1-x)Mn(x)Se NWs are about 40, 25, 25, 70 nm, respectively. Both electron-beam lithography and dielectrophoresis techniques are employed to either deposit two Ti/Au electrodes on single NW or positioned the NW into nanometer gap between two electrodes. Temperature dependent behaviors of resistance of two-probe devices are measured to explore the electron transport either in the NW or in the nanocontact formed in the interface between the NW and the Ti/Au electrodes. Two-probe devices with high and low room-temperature resistance are used to inspect and distinguish the interplay between the nanocontact and the NW. After the separation of NW-dominated devices from contact-dominated ones, the thermally activated transport in semiconductor ZnO, MP, and GaP NWs and the temperature independent tunneling conduction in Pb(1-x)Mn(x)Se NWs have been revealed. On the other hand, the contact-dominated devices display electron hopping transport in the nanocontact. Moreover, the fluctuation-induced tunneling conduction in the overlapped Pb(1-x)Mn(x)Se NWs has been observed. |
URI: | http://hdl.handle.net/11536/22120 |
ISBN: | 978-1-4244-3543-2 |
期刊: | INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 |
起始頁: | 1199 |
結束頁: | 1200 |
顯示於類別: | 會議論文 |