標題: | Profiling p(+)/n-Well Junction by Nanoprobing and Secondary Electron Potential Contrast |
作者: | Liu, Po-Tsun Lee, Jeng-Han 光電工程學系 顯示科技研究所 Department of Photonics Institute of Display |
關鍵字: | Junction profiling;nanoprobing;scanning electron microscope (SEM);secondary electron potential contrast (SEPC) |
公開日期: | 1-七月-2011 |
摘要: | This letter investigates the use of secondary electron potential contrast (SEPC) with an in situ dynamic nanoprobing trigger to examine a silicon p(+)/n- well junction. Experimental results demonstrate that applying a bias to the p(+)/n- well junction nodes can intensify the SEPC signal. An image processing procedure is used to convert the image contrast to a voltage scale, allowing the depletion region to be identified. The proposed method can maintain stable voltage conditions in the junction, facilitating inspection of the dopant area by scanning electron microscopy, potentially contributing to the development of an efficient method for examining dopant areas in real circuits. |
URI: | http://dx.doi.org/10.1109/LED.2011.2147752 http://hdl.handle.net/11536/22121 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2011.2147752 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 32 |
Issue: | 7 |
起始頁: | 868 |
結束頁: | 870 |
顯示於類別: | 期刊論文 |