標題: Profiling p(+)/n-Well Junction by Nanoprobing and Secondary Electron Potential Contrast
作者: Liu, Po-Tsun
Lee, Jeng-Han
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: Junction profiling;nanoprobing;scanning electron microscope (SEM);secondary electron potential contrast (SEPC)
公開日期: 1-七月-2011
摘要: This letter investigates the use of secondary electron potential contrast (SEPC) with an in situ dynamic nanoprobing trigger to examine a silicon p(+)/n- well junction. Experimental results demonstrate that applying a bias to the p(+)/n- well junction nodes can intensify the SEPC signal. An image processing procedure is used to convert the image contrast to a voltage scale, allowing the depletion region to be identified. The proposed method can maintain stable voltage conditions in the junction, facilitating inspection of the dopant area by scanning electron microscopy, potentially contributing to the development of an efficient method for examining dopant areas in real circuits.
URI: http://dx.doi.org/10.1109/LED.2011.2147752
http://hdl.handle.net/11536/22121
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2147752
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 7
起始頁: 868
結束頁: 870
顯示於類別:期刊論文


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