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dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorLee, Jeng-Hanen_US
dc.date.accessioned2014-12-08T15:31:02Z-
dc.date.available2014-12-08T15:31:02Z-
dc.date.issued2011-07-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2011.2147752en_US
dc.identifier.urihttp://hdl.handle.net/11536/22121-
dc.description.abstractThis letter investigates the use of secondary electron potential contrast (SEPC) with an in situ dynamic nanoprobing trigger to examine a silicon p(+)/n- well junction. Experimental results demonstrate that applying a bias to the p(+)/n- well junction nodes can intensify the SEPC signal. An image processing procedure is used to convert the image contrast to a voltage scale, allowing the depletion region to be identified. The proposed method can maintain stable voltage conditions in the junction, facilitating inspection of the dopant area by scanning electron microscopy, potentially contributing to the development of an efficient method for examining dopant areas in real circuits.en_US
dc.language.isoen_USen_US
dc.subjectJunction profilingen_US
dc.subjectnanoprobingen_US
dc.subjectscanning electron microscope (SEM)en_US
dc.subjectsecondary electron potential contrast (SEPC)en_US
dc.titleProfiling p(+)/n-Well Junction by Nanoprobing and Secondary Electron Potential Contrasten_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2011.2147752en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume32en_US
dc.citation.issue7en_US
dc.citation.spage868en_US
dc.citation.epage870en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000292165200012-
dc.citation.woscount2-
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