標題: A SIMPLE AND EFFICIENT PRETREATMENT TECHNOLOGY FOR SELECTIVE TUNGSTEN DEPOSITION IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR
作者: CHANG, KM
YEH, TH
LI, CH
WANG, SW
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: LPCVD;SELECTIVE TUNGSTEN DEPOSITION;PLASMA MODIFICATION;EX SITU PRETREATMENT
公開日期: 1-十二月-1994
摘要: In this paper rye develop a two-step pretreatment method which is a simple but effective cleaning process that can be used to achieve a high deposition rate and excellent interface characteristics, as well as improve the selectivity. In the first step, we use CF4/O-2 mixing gases as a plasma etching system without substrate bias. The removal of damage and contaminants by reactive ion etching (RIE) during contact hole opening can thus be obtained. We consider that the role of oxygen is first to oxidize the polymer residues (i.e., fluorocarbons like CxFy) and the RIE-damaged regions on the silicon surface, and it is then followed with CF4 to remove these oxides. experiments, the plasma modification rate can be controlled at 120 Angstrom/min. Results of the high deposition rate, smooth interface, low selectivity loss and the other improvements are observed. These are superior to those of cases without pretreatment. The second step is that anhydrous HF cleaning was used to remove surface oxide which was formed during the first step. Obviously, this new cleaning technology is very efficient not only for contact hole pretreatment but also for polysilicon materials. This also implies that this technology may have potential for polycide gate applications.
URI: http://dx.doi.org/10.1143/JJAP.33.7071
http://hdl.handle.net/11536/2219
ISSN: 0021-4922
DOI: 10.1143/JJAP.33.7071
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 33
Issue: 12B
起始頁: 7071
結束頁: 7075
顯示於類別:會議論文


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