標題: Tunable insulator-quantum Hall transition in a weakly interacting two-dimensional electron system
作者: Lo, Shun-Tsung
Wang, Yi-Ting
Lin, Sheng-Di
Strasser, Gottfried
Bird, Jonathan P.
Chen, Yang-Fang
Liang, Chi-Te
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Hall effect;Magnetoresistance;Electrons;Direct insulator-quantum hall transition
公開日期: 3-七月-2013
摘要: We have performed low-temperature measurements on a gated two-dimensional electron system in which electron-electron (e-e) interactions are insignificant. At low magnetic fields, disorder-driven movement of the crossing of longitudinal and Hall resistivities (rho (xx) and rho (xy)) can be observed. Interestingly, by applying different gate voltages, we demonstrate that such a crossing at rho (xx) similar to rho (xy) can occur at a magnetic field higher, lower, or equal to the temperature-independent point in rho (xx) which corresponds to the direct insulator-quantum Hall transition. We explicitly show that rho (xx) similar to rho (xy) occurs at the inverse of the classical Drude mobility 1/mu (D) rather than the crossing field corresponding to the insulator-quantum Hall transition. Moreover, we show that the background magnetoresistance can affect the transport properties of our device significantly. Thus, we suggest that great care must be taken when calculating the renormalized mobility caused by e-e interactions.
URI: http://dx.doi.org/10.1186/1556-276X-8-307
http://hdl.handle.net/11536/22211
ISSN: 1931-7573
DOI: 10.1186/1556-276X-8-307
期刊: NANOSCALE RESEARCH LETTERS
Volume: 8
Issue: 
結束頁: 
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