Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kuo, Li Min | en_US |
dc.contributor.author | Shih, Yu-Tai | en_US |
dc.contributor.author | Wu, Cen-Shawn | en_US |
dc.contributor.author | Lin, Yu-Chi | en_US |
dc.contributor.author | Chao, Shuchi | en_US |
dc.date.accessioned | 2014-12-08T15:31:15Z | - |
dc.date.available | 2014-12-08T15:31:15Z | - |
dc.date.issued | 2013-07-01 | en_US |
dc.identifier.issn | 0957-0233 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/0957-0233/24/7/075105 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22258 | - |
dc.description.abstract | A new hybrid integration method has been reported for process simplification of conventional metal-oxide sensors with a gold (Au) dopant-like catalyst during hydrogen sulfide (H2S) gas detections at room temperature. Different from conventional fabrications, an anisotropic conduction film (ACF) followed by a sputtered tungsten oxide (WO3) film tapped on Cu electrodes has been utilized in consumer applications. The process steps were reduced without compromising electrical performances. The treated ACF with a thin WO3 film, coated across two closely spaced microelectrodes is employed as the H2S solid-state sensor at room temperature. Apart from exhibiting good interconnects as conductive bumps, Au dopant-like catalyst within ACF will also produce a lower barrier between the bands of electronics, and therefore improve the electrical conductivity significantly. Our integration method offers a number of merits, including high sensitivity to the reference gas, lead-free bonding connection, low-temperature fabrication, high throughput and less fabrication time. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | H2S | en_US |
dc.subject | gas sensor | en_US |
dc.subject | ACF | en_US |
dc.subject | WO3 | en_US |
dc.subject | Au-catalyst | en_US |
dc.title | A new hybrid method for H2S-sensitive devices using WO3-based film and ACF interconnect | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/0957-0233/24/7/075105 | en_US |
dc.identifier.journal | MEASUREMENT SCIENCE & TECHNOLOGY | en_US |
dc.citation.volume | 24 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電機學院 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | College of Electrical and Computer Engineering | en_US |
dc.identifier.wosnumber | WOS:000320449100038 | - |
dc.citation.woscount | 1 | - |
Appears in Collections: | Articles |
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