Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, Hsun-Wen | en_US |
dc.contributor.author | Yu, Peichen | en_US |
dc.contributor.author | Wu, Yuh-Renn | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.contributor.author | Lin, Shiuan-Huei | en_US |
dc.date.accessioned | 2014-12-08T15:31:16Z | - |
dc.date.available | 2014-12-08T15:31:16Z | - |
dc.date.issued | 2013-07-01 | en_US |
dc.identifier.issn | 2156-3381 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/JPHOTOV.2013.2252953 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22259 | - |
dc.description.abstract | Traditional p-GaN/i-InGaN/n-GaN double heterojunction solar cells have limited power conversion efficiency due to large polarization charges that accumulate at the heterojunction interfaces, leading to severe band bending that, in turn, hinders the carrier transport. In this study, we proposed the use of a p-type InGaN layer to reduce the polarization field and projected the power conversion efficiencies of p-InxGa1-xN/i-InyGa1-yN/n-GaN double heterojunction solar cells that are grown on a c-facet sapphire substrate with various indium components. Numerical simulations predict that a maximal power conversion efficiency that is close to 7% with a short-circuit current density of 4.05 mA/cm(2) and an open-circuit voltage of 1.94 V can be achieved with a p-In0.2Ga0.8N/i-In0.2Ga0.8N/n-GaN structure due to a polarization-matched p-i interface. Further efficiency enhancement with a higher indium composition over 20% is also possible via the redistribution of the built-in potential with n-GaN doping. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | InGaN solar cells | en_US |
dc.subject | polarization effect | en_US |
dc.title | Projected Efficiency of Polarization-Matched p-InxGa1-xN/i-InyGa1-yN/n-GaN Double Heterojunction Solar Cells | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/JPHOTOV.2013.2252953 | en_US |
dc.identifier.journal | IEEE JOURNAL OF PHOTOVOLTAICS | en_US |
dc.citation.volume | 3 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 985 | en_US |
dc.citation.epage | 990 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000320862500010 | - |
dc.citation.woscount | 0 | - |
Appears in Collections: | Articles |
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