完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Jian, Sheng-Rui | en_US |
dc.contributor.author | Chang, Huang-Wei | en_US |
dc.contributor.author | Tseng, Yu-Chin | en_US |
dc.contributor.author | Chen, Ping-Han | en_US |
dc.contributor.author | Juang, Jenh-Yih | en_US |
dc.date.accessioned | 2014-12-08T15:31:21Z | - |
dc.date.available | 2014-12-08T15:31:21Z | - |
dc.date.issued | 2013-06-25 | en_US |
dc.identifier.issn | 1931-7573 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1186/1556-276X-8-297 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22279 | - |
dc.description.abstract | The nanomechanical properties of BiFeO3 (BFO) thin films are subjected to nanoindentation evaluation. BFO thin films are grown on the Pt/Ti/SiO2/Si substrates by using radio frequency magnetron sputtering with various deposition temperatures. The structure was analyzed by X-ray diffraction, and the results confirmed the presence of BFO phases. Atomic force microscopy revealed that the average film surface roughness increased with increasing of the deposition temperature. A Berkovich nanoindenter operated with the continuous contact stiffness measurement option indicated that the hardness decreases from 10.6 to 6.8 GPa for films deposited at 350A degrees C and 450A degrees C, respectively. In contrast, Young's modulus for the former is 170.8 GPa as compared to a value of 131.4 GPa for the latter. The relationship between the hardness and film grain size appears to follow closely with the Hall-Petch equation. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | BiFeO3 thin films | en_US |
dc.subject | XRD | en_US |
dc.subject | AFM | en_US |
dc.subject | Nanoindentation | en_US |
dc.subject | Hardness | en_US |
dc.title | Structural and nanomechanical properties of BiFeO3 thin films deposited by radio frequency magnetron sputtering | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1186/1556-276X-8-297 | en_US |
dc.identifier.journal | NANOSCALE RESEARCH LETTERS | en_US |
dc.citation.volume | 8 | en_US |
dc.citation.issue | en_US | |
dc.citation.epage | en_US | |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000321281900001 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |