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dc.contributor.authorWang, Chi-Chengen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.date.accessioned2014-12-08T15:31:23Z-
dc.date.available2014-12-08T15:31:23Z-
dc.date.issued2013-06-07en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4809574en_US
dc.identifier.urihttp://hdl.handle.net/11536/22299-
dc.description.abstractWe propose and simulate a device structure of resonant cavity-enhanced quantum-dot infrared photodetector (RCE-QDIP). The RCE-QDIP consists of a conventional n-i-n QDIP sandwiched by a bottom GaAs/Al2O3 distributed Bragg reflector and a top mirror of Ge/SiO2 sub-wavelength grating. Aiming for detecting mid-infrared at 8 mu m, the total thickness of the device is only similar to 7.7 mu m. According to our simulation, the external quantum efficiencies of RCE-QDIP could be as high as 59%-78% with the enhancement factors of 7-30, compared with a conventional QDIP. The proposed RCE-QDIP is highly feasible as the various fabrication parameters are considered. (C) 2013 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleResonant cavity-enhanced quantum-dot infrared photodetectors with sub-wavelength grating mirroren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4809574en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume113en_US
dc.citation.issue21en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000320674500009-
dc.citation.woscount5-
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