Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, Chi-Cheng | en_US |
dc.contributor.author | Lin, Sheng-Di | en_US |
dc.date.accessioned | 2014-12-08T15:31:23Z | - |
dc.date.available | 2014-12-08T15:31:23Z | - |
dc.date.issued | 2013-06-07 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.4809574 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22299 | - |
dc.description.abstract | We propose and simulate a device structure of resonant cavity-enhanced quantum-dot infrared photodetector (RCE-QDIP). The RCE-QDIP consists of a conventional n-i-n QDIP sandwiched by a bottom GaAs/Al2O3 distributed Bragg reflector and a top mirror of Ge/SiO2 sub-wavelength grating. Aiming for detecting mid-infrared at 8 mu m, the total thickness of the device is only similar to 7.7 mu m. According to our simulation, the external quantum efficiencies of RCE-QDIP could be as high as 59%-78% with the enhancement factors of 7-30, compared with a conventional QDIP. The proposed RCE-QDIP is highly feasible as the various fabrication parameters are considered. (C) 2013 AIP Publishing LLC. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Resonant cavity-enhanced quantum-dot infrared photodetectors with sub-wavelength grating mirror | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.4809574 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 113 | en_US |
dc.citation.issue | 21 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000320674500009 | - |
dc.citation.woscount | 5 | - |
Appears in Collections: | Articles |
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