Resonant cavity-enhanced quantum-dot infrared photodetectors with sub-wavelength grating mirror

doi:10.1063/1.4809574

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wang, Chi-Cheng	en_US
dc.contributor.author	Lin, Sheng-Di	en_US
dc.date.accessioned	2014-12-08T15:31:23Z	-
dc.date.available	2014-12-08T15:31:23Z	-
dc.date.issued	2013-06-07	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.4809574	en_US
dc.identifier.uri	http://hdl.handle.net/11536/22299	-
dc.description.abstract	We propose and simulate a device structure of resonant cavity-enhanced quantum-dot infrared photodetector (RCE-QDIP). The RCE-QDIP consists of a conventional n-i-n QDIP sandwiched by a bottom GaAs/Al2O3 distributed Bragg reflector and a top mirror of Ge/SiO2 sub-wavelength grating. Aiming for detecting mid-infrared at 8 mu m, the total thickness of the device is only similar to 7.7 mu m. According to our simulation, the external quantum efficiencies of RCE-QDIP could be as high as 59%-78% with the enhancement factors of 7-30, compared with a conventional QDIP. The proposed RCE-QDIP is highly feasible as the various fabrication parameters are considered. (C) 2013 AIP Publishing LLC.	en_US
dc.language.iso	en_US	en_US
dc.title	Resonant cavity-enhanced quantum-dot infrared photodetectors with sub-wavelength grating mirror	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.4809574	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	113	en_US
dc.citation.issue	21	en_US
dc.citation.epage		en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000320674500009	-
dc.citation.woscount	5	-
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