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dc.contributor.authorLin, Albert S.en_US
dc.contributor.authorFu, Sze-Mingen_US
dc.contributor.authorZhong, Yan-Kaien_US
dc.contributor.authorTseng, Chi-Weien_US
dc.contributor.authorLai, Shih-Yunen_US
dc.contributor.authorLau, Timothy Ching Kwoken_US
dc.date.accessioned2014-12-08T15:31:24Z-
dc.date.available2014-12-08T15:31:24Z-
dc.date.issued2013-06-01en_US
dc.identifier.issn0091-3286en_US
dc.identifier.urihttp://dx.doi.org/10.1117/1.OE.52.6.064002en_US
dc.identifier.urihttp://hdl.handle.net/11536/22311-
dc.description.abstractImproving spectral photon harvesting is important for thin-film multijunction cells. We show that efficient spectral flux management can be achieved using genetic algorithm-optimized surface plasmon (SP) cavity-resonant type multijunction cells. We also observe that the excitation of the SP quasi-guided mode, Fabry-Perot mode, and SP polariton significantly enhance the photocurrent of multijunction cells. Two types of cavity structures are investigated. For the optimized SP intermediate reflector and bottom-grating cavity, the resonant cavity mode efficiently increases the long-wavelength absorption in the bottom cell by 63.27%, resulting in reduced absorbance asymmetry between the top and the bottom cells. Accordingly, the matched integrated absorbance is increased by 14.92%. For the optimized SP top-and bottom-grating (TBG) cavity, the integrated absorbance and current matching are improved due to the higher transmission through the solar cell front surface and the excitation of the quasi-guided mode with a more localized field in the bottom cell. The matched integrated absorbance is improved by 85.68% for the TBG cavity. (C) 2013 Society of Photo-Optical Instrumentation Engineers (SPIE) [DOI:10.1117/1.OE.52.6.064002]en_US
dc.language.isoen_USen_US
dc.subjectsolar cellen_US
dc.subjectsurface plasmonen_US
dc.subjectguided modeen_US
dc.subjectmultijunction cellen_US
dc.titleOptimization of plasmonic cavity-resonant multijunction cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1117/1.OE.52.6.064002en_US
dc.identifier.journalOPTICAL ENGINEERINGen_US
dc.citation.volume52en_US
dc.citation.issue6en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000322077000016-
dc.citation.woscount0-
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