Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yu, Cheng-Chang | en_US |
dc.contributor.author | Hsu, Yu-Ting | en_US |
dc.contributor.author | Lee, Shao-Yi | en_US |
dc.contributor.author | Lan, Wen-How | en_US |
dc.contributor.author | Kuo, Hsin-Hui | en_US |
dc.contributor.author | Shih, Ming-Chang | en_US |
dc.contributor.author | Feng, David Jui-Yang | en_US |
dc.contributor.author | Huang, Kai-Feng | en_US |
dc.date.accessioned | 2014-12-08T15:31:26Z | - |
dc.date.available | 2014-12-08T15:31:26Z | - |
dc.date.issued | 2013-06-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.7567/JJAP.52.065502 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22333 | - |
dc.description.abstract | Boron-doped zinc oxide (BZO) thin films have been fabricated by spray pyrolysis on a glass substrate. The morphology and electrical properties of the thin films were investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses were performed. It was found that [B]/[Zn] ratio altered both the microstructure and concentration of the BZO thin films. The film grain size was reduced by increasing the [B]/[Zn] ratio. The highest Hall mobility was 3.65 cm(2)V(-1)s(-1) for the undoped ZnO thin film, and the highest carrier concentration of 1.0 x 10(19) cm(-3) was achieved for the as-deposited BZO thin film with [B]/[Zn] = 1.5 at. %. Conductivity was determined at different measurement temperatures and shallow donors provided the dominate conduction mechanism for the as-deposited BZO thin films. After 600 degrees C annealing, shallow level reduction and donors with a high activation energy of 129 +/- 6 meV in the BZO thin films were characterized, and the shallow donors that dominate the carrier concentration for the as-deposited spray-pyrolized BZO thin film were eliminated. (C) 2013 The Japan Society of Applied Physics | en_US |
dc.language.iso | en_US | en_US |
dc.title | Effects of Doping Ratio and Thermal Annealing on Structural and Electrical Properties of Boron-Doped ZnO Thin Films by Spray Pyrolysis | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.7567/JJAP.52.065502 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 52 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000319998200031 | - |
dc.citation.woscount | 1 | - |
Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.