標題: | Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures |
作者: | Hai Dang Trinh Minh Thuy Nguyen Lin, Yueh Chin Quoc Van Duong Hong Quan Nguyen Chang, Edward Yi 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-六月-2013 |
摘要: | From the Fowler-Nordheim (FN) current-voltage (I-V) characteristic and X-ray photoelectron spectroscopy (XPS) analysis, the conduction band offset of 2.73 +/- 0.1 eV and the valence band offset of 3.76 +/- 0.1 eV have been extracted for the atomic-layer-deposition (ALD) Al2O3/InSb structure. By these analyses, the parameters of an Al2O3 film including bandgap, electron affinity, and electron effective mass are also deduced. The capacitance-voltage and I-V characteristics of ALD Al2O3/InSb at different deposition temperatures indicate the modification of the Fermi level in InSb to 0.09 eV lower than that in metal side of the sample deposited at 250 degrees C as compared to the samples deposited at lower temperatures. (C) 2013 The Japan Society of Applied Physics |
URI: | http://dx.doi.org/10.7567/APEX.6.061202 http://hdl.handle.net/11536/22336 |
ISSN: | 1882-0778 |
DOI: | 10.7567/APEX.6.061202 |
期刊: | APPLIED PHYSICS EXPRESS |
Volume: | 6 |
Issue: | 6 |
結束頁: | |
顯示於類別: | 期刊論文 |