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dc.contributor.authorLyu, Yang-Ruen_US
dc.contributor.authorHsieh, Tsung-Eongen_US
dc.date.accessioned2014-12-08T15:31:32Z-
dc.date.available2014-12-08T15:31:32Z-
dc.date.issued2013-05-14en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4803877en_US
dc.identifier.urihttp://hdl.handle.net/11536/22360-
dc.description.abstractNanocomposite thin films containing In2O3 nanoparticles were prepared by the target-attachment sputtering utilizing the InN pellets and allowing the N-2 inlet gas flow during the deposition process. The x-ray photoelectron spectroscopy revealed that the chemical composition of In2O3 nanoparticles becomes InOxNy and the SiOxNy phase forms in the matrix of nanocomposite layer. Photoluminescence analysis indicated that the dielectric confinement effect induced by the N-incorporation tends to restrain the green emission of nanocomposite layers due to the presence of surface polarization on nanoparticles. Suppression of blue emission was also observed due to the elimination of oxygen vacancies in In2O3 nanoparticles. Furthermore, the N elements might occupy the oxygen lattice sites and generate a new defect level, N-O(-), to induce the violet emission. Analytical results confirmed the mechanisms of green and blue emissions of the nanocomposite thin films containing In2O3 nanoparticles reported previously. (C) 2013 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleThe effect of dielectric confinement on photoluminescence of In2O3-SiO2 nanocomposite thin films incorporated by nitrogenen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4803877en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume113en_US
dc.citation.issue18en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000319294100077-
dc.citation.woscount1-
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