| 標題: | AS PRECIPITATE REDISTRIBUTION IN SI DELTA-DOPED LOW-TEMPERATURE GAAS |
| 作者: | CHENG, TM CHANG, CY HUANG, JH 電控工程研究所 Institute of Electrical and Control Engineering |
| 公開日期: | 15-Nov-1994 |
| URI: | http://dx.doi.org/10.1063/1.357076 http://hdl.handle.net/11536/2236 |
| ISSN: | 0021-8979 |
| DOI: | 10.1063/1.357076 |
| 期刊: | JOURNAL OF APPLIED PHYSICS |
| Volume: | 76 |
| Issue: | 10 |
| 起始頁: | 5697 |
| 結束頁: | 5701 |
| Appears in Collections: | Articles |
- Arsenic precipitate accumulation in alternately Si/Be delta-doped GaAs grown by low-temperature molecular beam epitaxy / Hsieh, LZ;Huang, JH;Su, ZA;Wu, MC
- The microstructure of As precipitates in Si delta-doped GaAs grown by low-temperature molecular beam epitaxy / Hsieh, LZ;Huang, JH;Su, ZA;Guo, XJ;Shih, HC
- FORMATION AND CHARACTERIZATION OF GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE-TEMPERATURE / CHENG, TM;CHANG, CY;HUANG, JH
- Effects of doping type and concentration on precipitation of nanometer arsenic clusters in low-temperature-grown GaAs / Lee, WN;Chen, YF;Huang, JH;Guo, XJ;Kuo, CT
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