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dc.contributor.authorTsai, Dung-Shengen_US
dc.contributor.authorLiu, Keng-Kuen_US
dc.contributor.authorLien, Der-Hsienen_US
dc.contributor.authorTsai, Meng-Linen_US
dc.contributor.authorKang, Chen-Fangen_US
dc.contributor.authorLin, Chin-Anen_US
dc.contributor.authorLi, Lain-Jongen_US
dc.contributor.authorHe, Jr-Hauen_US
dc.date.accessioned2014-12-08T15:31:33Z-
dc.date.available2014-12-08T15:31:33Z-
dc.date.issued2013-05-01en_US
dc.identifier.issn1936-0851en_US
dc.identifier.urihttp://dx.doi.org/10.1021/nn305301ben_US
dc.identifier.urihttp://hdl.handle.net/11536/22376-
dc.description.abstractFew-layered MoS2 as Schottky metal-semiconductor-metal photodetectors (MSM PDs) for use In harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain (up to 13.3), high detectivity (up to similar to 10(10) cm Hz(1/2)/W), fast photoresponse (rise time of similar to 70 mu s and fall time of similar to 110 mu s), and high thermal stability (at a working temperature of up to 200 degrees C). Ultrahigh responsivity (0.57 A/W) of few-layer MoS2 at 532 nm is due to the high optical absorption (similar to 10% despite being less than 2 nm in thickness) and a high photogain, which sets up a new record that was not achievable in 2D nanomaterials previously. This study opens avenues to develop 2D nanomaterial-based optoelectronics for harsh environments in imaging techniques and light-wave communications as well as in future memory storage and optoelectronic circuits.en_US
dc.language.isoen_USen_US
dc.subjectgrapheneen_US
dc.subjectMoS2en_US
dc.subjectphotodetectoren_US
dc.subjecthigh-temperature detectionen_US
dc.subjectharsh environmenten_US
dc.titleFew-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environmentsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/nn305301ben_US
dc.identifier.journalACS NANOen_US
dc.citation.volume7en_US
dc.citation.issue5en_US
dc.citation.spage3905en_US
dc.citation.epage3911en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000319856300027-
dc.citation.woscount49-
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