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dc.contributor.authorRamesh, Mohanen_US
dc.contributor.authorLin, Hong-Cheuen_US
dc.contributor.authorChu, Chih-Weien_US
dc.date.accessioned2014-12-08T15:31:34Z-
dc.date.available2014-12-08T15:31:34Z-
dc.date.issued2013-04-15en_US
dc.identifier.issn0956-5663en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.bios.2012.10.050en_US
dc.identifier.urihttp://hdl.handle.net/11536/22384-
dc.description.abstractIn this short communication we report a sensor for divalent mercuric (Hg2+) ions that we constructed from a perylene bisimide (PBI)-based organic thin film transistor. We improved the performance of the n-channel device by positioning N,N'-dioctyl-3,4,9,10-perylenedicarboximide between the dielectric and the active layer (PSI), increasing the electron mobility (mu) from 0.002 to 0.25 +/- 0.04 cm(2) V-1 s(-1) and enhancing the on/off ratio (I-on/I-off) by two orders of magnitude (from 102 to 104). Based on a "thymine-Hg2+-thymine" mechanism and monitoring the shift in the threshold voltage (V-th), we used this transistor to discriminate Hg2+ ions from mixed ion solutions and it extended to different concentration Hg2+ solutions (from 50 to 350 mu M). By monitoring the shifts in drain current (I-DS) and V-th, we also used this bilayer device as a sensor for cysteine, a thiol-containing amino acid; the selective detection of cysteine was accompanied by a red shift in the fluorescence maximum of PBI, from 532 to 537 nm. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectPerylene bisimideen_US
dc.subjectThin film transistoren_US
dc.subjectMetal ion sensoren_US
dc.subjectMercuric ionen_US
dc.subjectAmino aciden_US
dc.titleOrganic thin film transistors as selective sensing platforms for Hg2+ ions and the amino acid cysteineen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.bios.2012.10.050en_US
dc.identifier.journalBIOSENSORS & BIOELECTRONICSen_US
dc.citation.volume42en_US
dc.citation.issueen_US
dc.citation.spage76en_US
dc.citation.epage79en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000319951700014-
dc.citation.woscount2-
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