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dc.contributor.authorHsieh, Cheng-Yuen_US
dc.contributor.authorLin, Bo-Wenen_US
dc.contributor.authorCho, Hsin-Juen_US
dc.contributor.authorWang, Bau-Mingen_US
dc.contributor.authorWu, YewChung Sermonen_US
dc.date.accessioned2014-12-08T15:31:37Z-
dc.date.available2014-12-08T15:31:37Z-
dc.date.issued2012en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://hdl.handle.net/11536/22411-
dc.identifier.urihttp://dx.doi.org/10.1149/2.007202jssen_US
dc.description.abstractA simple, easy and relatively inexpensive liquid phase deposition (LPD) method was used to introduce nano SiO2 on sapphire substrates to fabricate nanoscale patterned sapphire substrates (PSS). Two kinds of nanoscale PSS were used to grow GaN, namely "NPOS" which is nano-pattern oxide on sapphire substrate and "NPSS" which is nano-patterned sapphire substrate. It was found that upper region of NPSS-GaN had the best quality. This is because as the growth time increased, laterally-grown GaN caused the threading dislocations to bend toward the patterns. Besides, voids formed on the NPSS pattern sidewalls caused more threading dislocation bending toward these voids. (C) 2012 The Electrochemical Society. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleInvestigation of GaN Films Grown on Liquid-Phase Deposited SiO2 Nanopatterned Sapphire Substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.007202jssen_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.citation.volume1en_US
dc.citation.issue2en_US
dc.citation.spageQ35en_US
dc.citation.epageQ37en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000319445100017-
dc.citation.woscount4-
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