完整後設資料紀錄
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dc.contributor.authorIbrahem, Mohammed Azizen_US
dc.contributor.authorLan, Tian-weyen_US
dc.contributor.authorHuang, Jing Kaien_US
dc.contributor.authorChen, Yang-Yuanen_US
dc.contributor.authorWei, Kung-Hwaen_US
dc.contributor.authorLi, Lain-Jongen_US
dc.contributor.authorChu, Chih Weien_US
dc.date.accessioned2014-12-08T15:31:41Z-
dc.date.available2014-12-08T15:31:41Z-
dc.date.issued2013en_US
dc.identifier.issn2046-2069en_US
dc.identifier.urihttp://hdl.handle.net/11536/22422-
dc.identifier.urihttp://dx.doi.org/10.1039/c3ra41744aen_US
dc.description.abstractLow-cost and large-area electronic applications require the deposition of active materials in simple and inexpensive techniques at room temperature; properties usually associated with polymer films. In this study, we demonstrate a simple, low-cost and environmentally friendly method for the high-yield production of two dimensional nanosheets of semiconducting transition metal disulfides, integrated with the route towards the solution-processed deposition of MoS2 and WS2 thin films. The resulting materials with high purity and no contamination or distortion in their structural and electronic properties were confirmed with different microscopic and macroscopic methods. As a proof of concept, we utilize these layered transition metal disulphide films as electron extraction layers in an inverted structure organic solar cell, prepared at relatively low annealing temperatures (<= 150 degrees C). A promising power conversion efficiency with high stability is achieved, which makes these proposed buffer layers quite attractive for next-generation flexible devices requiring high conductivity and transparency, as well as wide range of other potential applications.en_US
dc.language.isoen_USen_US
dc.titleHigh quantity and quality few-layers transition metal disulfide nanosheets from wet-milling exfoliationen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c3ra41744aen_US
dc.identifier.journalRSC ADVANCESen_US
dc.citation.volume3en_US
dc.citation.issue32en_US
dc.citation.spage13193en_US
dc.citation.epage13202en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000322068400022-
dc.citation.woscount5-
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