完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ibrahem, Mohammed Aziz | en_US |
dc.contributor.author | Lan, Tian-wey | en_US |
dc.contributor.author | Huang, Jing Kai | en_US |
dc.contributor.author | Chen, Yang-Yuan | en_US |
dc.contributor.author | Wei, Kung-Hwa | en_US |
dc.contributor.author | Li, Lain-Jong | en_US |
dc.contributor.author | Chu, Chih Wei | en_US |
dc.date.accessioned | 2014-12-08T15:31:41Z | - |
dc.date.available | 2014-12-08T15:31:41Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.issn | 2046-2069 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22422 | - |
dc.identifier.uri | http://dx.doi.org/10.1039/c3ra41744a | en_US |
dc.description.abstract | Low-cost and large-area electronic applications require the deposition of active materials in simple and inexpensive techniques at room temperature; properties usually associated with polymer films. In this study, we demonstrate a simple, low-cost and environmentally friendly method for the high-yield production of two dimensional nanosheets of semiconducting transition metal disulfides, integrated with the route towards the solution-processed deposition of MoS2 and WS2 thin films. The resulting materials with high purity and no contamination or distortion in their structural and electronic properties were confirmed with different microscopic and macroscopic methods. As a proof of concept, we utilize these layered transition metal disulphide films as electron extraction layers in an inverted structure organic solar cell, prepared at relatively low annealing temperatures (<= 150 degrees C). A promising power conversion efficiency with high stability is achieved, which makes these proposed buffer layers quite attractive for next-generation flexible devices requiring high conductivity and transparency, as well as wide range of other potential applications. | en_US |
dc.language.iso | en_US | en_US |
dc.title | High quantity and quality few-layers transition metal disulfide nanosheets from wet-milling exfoliation | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1039/c3ra41744a | en_US |
dc.identifier.journal | RSC ADVANCES | en_US |
dc.citation.volume | 3 | en_US |
dc.citation.issue | 32 | en_US |
dc.citation.spage | 13193 | en_US |
dc.citation.epage | 13202 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000322068400022 | - |
dc.citation.woscount | 5 | - |
顯示於類別: | 期刊論文 |