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dc.contributor.authorChang, Hsiu-Chengen_US
dc.contributor.authorChen, Chun-Huaen_US
dc.contributor.authorKuo, Yung-Kangen_US
dc.date.accessioned2014-12-08T15:31:43Z-
dc.date.available2014-12-08T15:31:43Z-
dc.date.issued2013en_US
dc.identifier.issn2040-3364en_US
dc.identifier.urihttp://hdl.handle.net/11536/22439-
dc.identifier.urihttp://dx.doi.org/10.1039/c3nr01499aen_US
dc.description.abstractAn innovative concept of twin-enhanced thermoelectricity was proposed to fundamentally resolve the high electrical resistance while not degrading the phonon scattering of the thermoelectric nanoassemblies. Under this frame, a variety of highly oriented and twinned bismuth antimony telluride (BixSb2-xTe3) nanocrystals were successfully fabricated by a large-area pulsed-laser deposition (PLD) technique on insulated silicon substrates at various deposition temperatures. The significant presence of the nonbasal- and basal-plane twins across the hexagonal BiSbTe nanocrystals, which were experimentally and systematically observed for the first time, evidently contributes to the unusually high electrical conductivity of similar to 2700 S cm(-1) and the power factor of similar to 25 mu W cm(-1) K-2 as well as the relatively low thermal conductivity of similar to 1.1 W m(-1) K-1 found in these nanostructured films.en_US
dc.language.isoen_USen_US
dc.titleGreat enhancements in the thermoelectric power factor of BiSbTe nanostructured films with well-ordered interfacesen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c3nr01499aen_US
dc.identifier.journalNANOSCALEen_US
dc.citation.volume5en_US
dc.citation.issue15en_US
dc.citation.spage7017en_US
dc.citation.epage7025en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000321675600050-
dc.citation.woscount5-
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