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dc.contributor.authorChen, Wei-Chunen_US
dc.contributor.authorTian, Jr-Shengen_US
dc.contributor.authorWu, Yue-Hanen_US
dc.contributor.authorWang, Wei-Linen_US
dc.contributor.authorKuo, Shou-Yien_US
dc.contributor.authorLai, Fang-Ien_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2014-12-08T15:31:44Z-
dc.date.available2014-12-08T15:31:44Z-
dc.date.issued2013en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://hdl.handle.net/11536/22448-
dc.identifier.urihttp://dx.doi.org/10.1149/2.011307jssen_US
dc.description.abstractInN epilayers were prepared on c-GaN/sapphire substrates by plasma-assisted metal-organic molecular beam epitaxy using N-2 and trimethylindium precursor as the V/III sources. We studied the influence of the V/III flow ratio on the film structure, surface morphology, film compositions, and optical and electrical properties using scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), X-ray diffraction, X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), photoluminescence (PL) measurement and Hall effect. The results show that epitaxial InN films can be obtained with the V/III ratio in the range between 1.81 and 4 at 500 degrees C. The InN growth rate decreases from 1.9 to 1.4 mu m/h when the ratio increases from 1.81 to 4. The surfaces of the InN films are not smooth in the V/III range used. Cross-sectional TEM revealed that the planar defect density in InN is as high as similar to 1.5 x 10(6) cm(-1) at a V/III ratio of similar to 1.81. XPS and SIMS results show that the film surface contains oxygen, which is found to affect the measured carrier mobility and concentration. (C) 2013 The Electrochemical Society. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleInfluence of V/III Flow Ratio on Growth of InN on GaN by PA-MOMBEen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.011307jssen_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.citation.volume2en_US
dc.citation.issue7en_US
dc.citation.spageP305en_US
dc.citation.epageP310en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000319459100004-
dc.citation.woscount1-
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