Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, Yuan-Ming | en_US |
dc.contributor.author | Kao, Pin-Hsu | en_US |
dc.contributor.author | Tai, Hung-Ming | en_US |
dc.contributor.author | Wang, Hau-Wei | en_US |
dc.contributor.author | Lin, Chih-Ming | en_US |
dc.contributor.author | Lee, Hsin-Yi | en_US |
dc.contributor.author | Juang, Jenh-Yih | en_US |
dc.date.accessioned | 2014-12-08T15:31:44Z | - |
dc.date.available | 2014-12-08T15:31:44Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.issn | 1463-9076 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22451 | - |
dc.identifier.uri | http://dx.doi.org/10.1039/c3cp50948f | en_US |
dc.description.abstract | Metallic gold (Au) and platinum (Pt) thin films were deposited on silicon nanocones (Si-NCs) by sputtering to elucidate the effects of work function and conductivities on the field electron emission characteristics of surface-modified Si-NCs. The results showed that for Pt/Si-NCs and Au/Si-NCs, although the turn-on field defined at a corresponding current density of 10 mu A cm(-2) only improved from 4.20 V mu m(-1) for bare Si-NCs to 3.65 and 2.90 V mu m(-1), respectively, the emission current density measured at 5.00 V mu m(-1) was enhanced by orders of magnitude, reaching 1.82 mA cm(-2) for Au/Si-NCs. Compared to those obtained from various surface-modified Si-nanostructures, such as ZnO/Si-nanopillars and ferroelectrics/Si-nanotips, the current results represent an interesting alternative route for producing surface-modified Si-NCs that might be useful for optical and electronic applications. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Enhanced field emission characteristics in metal-coated Si-nanocones | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1039/c3cp50948f | en_US |
dc.identifier.journal | PHYSICAL CHEMISTRY CHEMICAL PHYSICS | en_US |
dc.citation.volume | 15 | en_US |
dc.citation.issue | 26 | en_US |
dc.citation.spage | 10761 | en_US |
dc.citation.epage | 10766 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000320321600022 | - |
dc.citation.woscount | 4 | - |
Appears in Collections: | Articles |
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