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dc.contributor.authorChien, K. F.en_US
dc.contributor.authorHsu, W. L.en_US
dc.contributor.authorTzou, A. J. .en_US
dc.contributor.authorLin, Y. C.en_US
dc.contributor.authorChou, W. C.en_US
dc.contributor.authorLee, L.en_US
dc.contributor.authorChia, C. H.en_US
dc.contributor.authorYang, C. S.en_US
dc.date.accessioned2014-12-08T15:31:46Z-
dc.date.available2014-12-08T15:31:46Z-
dc.date.issued2013-09-01en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2012.12.151en_US
dc.identifier.urihttp://hdl.handle.net/11536/22473-
dc.description.abstract` The thermal-activated carrier transfer processes in a Zn0.98Cd0.020 thin film grown by plasma-assisted molecular beam epitaxy were investigated using temperature-dependent and time-resolved photoluminescence (PL) spectroscopy. As the temperature increases from 50 to 220 K, the carriers transfer from shallow to deep localized states. Additionally, the carriers escape from the deep localized states above 220 K due to an activation energy of about 19 meV. (c) 2013 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectOxidesen_US
dc.subjectZinc compoundsen_US
dc.subjectSemiconducting II-VI materialsen_US
dc.titleThermal-activated carrier transfer in ZnCdO thin film grown by plasma-assisted molecular beam epitaxyen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.jcrysgro.2012.12.151en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume378en_US
dc.citation.issueen_US
dc.citation.spage208en_US
dc.citation.epage211en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000323355900054-
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