"S-shaped" Photoluminescence Emission Shift in Cu(In,Ga)Se-2 Thin Films

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DC Field	Value	Language
dc.contributor.author	Liao, Y. K.	en_US
dc.contributor.author	Kuo, S. Y.	en_US
dc.contributor.author	Lai, F. I.	en_US
dc.contributor.author	Lin, W. T.	en_US
dc.contributor.author	Hsieh, D. H.	en_US
dc.contributor.author	Chiu, D. W.	en_US
dc.contributor.author	Kuo, H. C.	en_US
dc.date.accessioned	2014-12-08T15:31:51Z	-
dc.date.available	2014-12-08T15:31:51Z	-
dc.date.issued	2012	en_US
dc.identifier.isbn	978-1-4673-6274-0	en_US
dc.identifier.issn	2162-108X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/22500	-
dc.description.abstract	We have utilized photoluminescence (PL) measurement to investigate carrier recombination mechanism in Cu(In,Ga)Se-2 thin films and observed an S-shaped emission shift revealed from the corresponding PL peak of near band edge transition.	en_US
dc.language.iso	en_US	en_US
dc.title	"S-shaped" Photoluminescence Emission Shift in Cu(In,Ga)Se-2 Thin Films	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2012 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP)	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000322085900129	-
Appears in Collections:	Conferences Paper