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dc.contributor.authorLin, Da-Weien_US
dc.contributor.authorWang, Chao-Hsunen_US
dc.contributor.authorChang, Shih-Pangen_US
dc.contributor.authorChiu, Ching-Hsuehen_US
dc.contributor.authorLan, Yu-Pinen_US
dc.contributor.authorLi, Zhen-Yuen_US
dc.contributor.authorLi, Jin-Chaien_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2014-12-08T15:31:51Z-
dc.date.available2014-12-08T15:31:51Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-4673-6274-0en_US
dc.identifier.issn2162-108Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/22501-
dc.description.abstractIn this paper, we propose several methods to improve the efficiency droop of GaN-based light-emitting diodes by optimization of active regions, such as alternative substrates, semi-polar MQWs, insertion layer, graded-thickness MQWs, and graded-composition EBL.en_US
dc.language.isoen_USen_US
dc.titleImprovement in efficiency droop of GaN-based light-emitting diodes by optimization of active regionsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP)en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000322085900228-
Appears in Collections:Conferences Paper