Full metadata record
DC FieldValueLanguage
dc.contributor.authorTsai, Yu Linen_US
dc.contributor.authorChen, Hsin-Chuen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorHan, Hau-Veien_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2014-12-08T15:31:51Z-
dc.date.available2014-12-08T15:31:51Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-4673-6274-0en_US
dc.identifier.issn2162-108Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/22503-
dc.description.abstractWe demonstrate a hybrid design of InGaN/GaN multiple quantum well (MQW) solar cells combined with colloidal CdS quantum dots. With anti-reflective feature at long wavelength and down-conversion at UV regime, the CdS quantum dot effectively enhance the overall power conversion efficiency by as high as 7.2% compared to the no CdS quantum dots coated device.en_US
dc.language.isoen_USen_US
dc.titleHighly efficient CdS-quantum-dot-sensitized InGaN multiple quantum well solar cellsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP)en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000322085900136-
Appears in Collections:Conferences Paper