Highly efficient CdS-quantum-dot-sensitized InGaN multiple quantum well solar cells

Full metadata record

DC Field	Value	Language
dc.contributor.author	Tsai, Yu Lin	en_US
dc.contributor.author	Chen, Hsin-Chu	en_US
dc.contributor.author	Lin, Chien-Chung	en_US
dc.contributor.author	Han, Hau-Vei	en_US
dc.contributor.author	Yu, Peichen	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.date.accessioned	2014-12-08T15:31:51Z	-
dc.date.available	2014-12-08T15:31:51Z	-
dc.date.issued	2012	en_US
dc.identifier.isbn	978-1-4673-6274-0	en_US
dc.identifier.issn	2162-108X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/22503	-
dc.description.abstract	We demonstrate a hybrid design of InGaN/GaN multiple quantum well (MQW) solar cells combined with colloidal CdS quantum dots. With anti-reflective feature at long wavelength and down-conversion at UV regime, the CdS quantum dot effectively enhance the overall power conversion efficiency by as high as 7.2% compared to the no CdS quantum dots coated device.	en_US
dc.language.iso	en_US	en_US
dc.title	Highly efficient CdS-quantum-dot-sensitized InGaN multiple quantum well solar cells	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2012 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP)	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000322085900136	-
Appears in Collections:	Conferences Paper