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dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorLi, Chang-Hungen_US
dc.contributor.authorYeh, Chun-Chengen_US
dc.contributor.authorDai, Ming-Zhien_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorTsai, Chuang-Chuangen_US
dc.date.accessioned2014-12-08T15:31:53Z-
dc.date.available2014-12-08T15:31:53Z-
dc.date.issued2011-06-20en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3601488en_US
dc.identifier.urihttp://hdl.handle.net/11536/22529-
dc.description.abstractAn organic sensing layer is capped onto an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) to form a hybrid sensor. The organic layer, served as a second gate, forms a p-n junction with the a-IGZO film. Oxidizing or reducing vapor molecules act like electron acceptors or electron donors to change the potential of the organic layer and the current of a-IGZO TFT. A sensitive and reversible response to 100 ppb ammonia and 100 ppb acetone is obtained at room temperature. This letter opens a route to develop low-cost large-area bio/chemical sensor arrays based on the emerging a-IGZO TFT technology. (C) 2011 American Institute of Physics. [doi:10.1063/1.3601488]en_US
dc.language.isoen_USen_US
dc.titleRoom-temperature-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3601488en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume98en_US
dc.citation.issue25en_US
dc.citation.epageen_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000292039900069-
dc.citation.woscount25-
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