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dc.contributor.authorHsiao, Jui-Chungen_US
dc.contributor.authorChen, Chien-Hsunen_US
dc.contributor.authorYang, Hung-Jenen_US
dc.contributor.authorWu, Chien-Liangen_US
dc.contributor.authorFan, Chia-Mingen_US
dc.contributor.authorHuang, Chien-Fuen_US
dc.contributor.authorLin, Chao-Chengen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorHwang, Jenn-Changen_US
dc.date.accessioned2014-12-08T15:31:54Z-
dc.date.available2014-12-08T15:31:54Z-
dc.date.issued2013-09-01en_US
dc.identifier.issn1876-1070en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jtice.2013.01.027en_US
dc.identifier.urihttp://hdl.handle.net/11536/22535-
dc.description.abstractThis paper demonstrates the growth of highly-textured boron-doped ZnO (ZnO:B) film by using low-pressure chemical-vapor-deposition (LPCVD) for efficient light harvesting and carrier collection in heterojunction silicon-based (HJS) solar cells. The optical and electrical characteristics have been optimized versus the substrate temperature and B2H6 flow rate for tradeoffs among the sheet resistance, free-carrier absorption, and optical transmission of blue/green wavelengths. A HJS solar cell with a 1.6-mu m-thick ZnO:B film achieves a high power conversion efficiency of 16.30% and fill factor of 78.05%, compared to 15.64% and 72.17%, respectively, from a counterpart with a conventional 80-nm-thick indium tin oxide layer. (C) 2013 Taiwan Institute of Chemical Engineers. Published by Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectZnO:Ben_US
dc.subjectHeterojunction solar cellen_US
dc.subjectLow-pressure chemical-vapor-depositionen_US
dc.titleHighly textured ZnO:B films grown by low pressure chemical vapor deposition for efficiency enhancement of heterojunction silicon-based solar cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jtice.2013.01.027en_US
dc.identifier.journalJOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERSen_US
dc.citation.volume44en_US
dc.citation.issue5en_US
dc.citation.spage758en_US
dc.citation.epage761en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000323294800008-
dc.citation.woscount4-
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