Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Tsai, Min-An | en_US |
| dc.contributor.author | Yu, Peichen | en_US |
| dc.contributor.author | Chiu, C. H. | en_US |
| dc.contributor.author | Kuo, H. C. | en_US |
| dc.contributor.author | Lu, T. C. | en_US |
| dc.date.accessioned | 2014-12-08T15:31:56Z | - |
| dc.date.available | 2014-12-08T15:31:56Z | - |
| dc.date.issued | 2010 | en_US |
| dc.identifier.isbn | 978-1-4244-3543-2 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/22562 | - |
| dc.description.abstract | In this study, InGaP/GaAs solar cells fabricated by a Sub-wavelength surface texture process are presented. The characteristics of the InGaP/GaAs solar cells with and without the Sub-wavelength surface texture are studied. The conversion efficiency measured under one-sun air mass 1.5 global illumination at room temperature can also be improved from 10.8%. The simulated result of the Sub-wavelength structure by the RCWA was demonstrated that absorption of the solar cell will increase by the Sub-wavelength surface texture. | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | High Efficiency InGaP/GaAs Solar Cell with Sub-wavelength Structure on AlInP Window Layer | en_US |
| dc.type | Article | en_US |
| dc.identifier.journal | INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 | en_US |
| dc.citation.spage | 781 | en_US |
| dc.citation.epage | 782 | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.identifier.wosnumber | WOS:000282026500394 | - |
| Appears in Collections: | Conferences Paper | |

