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dc.contributor.authorTsai, Min-Anen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorChiu, C. H.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorLu, T. C.en_US
dc.date.accessioned2014-12-08T15:31:56Z-
dc.date.available2014-12-08T15:31:56Z-
dc.date.issued2010en_US
dc.identifier.isbn978-1-4244-3543-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/22562-
dc.description.abstractIn this study, InGaP/GaAs solar cells fabricated by a Sub-wavelength surface texture process are presented. The characteristics of the InGaP/GaAs solar cells with and without the Sub-wavelength surface texture are studied. The conversion efficiency measured under one-sun air mass 1.5 global illumination at room temperature can also be improved from 10.8%. The simulated result of the Sub-wavelength structure by the RCWA was demonstrated that absorption of the solar cell will increase by the Sub-wavelength surface texture.en_US
dc.language.isoen_USen_US
dc.titleHigh Efficiency InGaP/GaAs Solar Cell with Sub-wavelength Structure on AlInP Window Layeren_US
dc.typeArticleen_US
dc.identifier.journalINEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2en_US
dc.citation.spage781en_US
dc.citation.epage782en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000282026500394-
Appears in Collections:Conferences Paper