完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLee, Po-Tsungen_US
dc.contributor.authorLu, Tsan-Wenen_US
dc.contributor.authorSio, Kuan-Unen_US
dc.date.accessioned2014-12-08T15:31:57Z-
dc.date.available2014-12-08T15:31:57Z-
dc.date.issued2011-06-15en_US
dc.identifier.issn0733-8724en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JLT.2011.2142176en_US
dc.identifier.urihttp://hdl.handle.net/11536/22573-
dc.description.abstractIn this report, we demonstrate multi-functional light emitter based on band-edge modes near Gamma-point in a two-dimensional honeycomb photonic crystal slab. Different band-edge modes near Gamma-point are identified, including the monopole (Gamma(2)), dipole (Gamma(4,5)) and quadrupole (Gamma(6,7)) modes. The monopole and quadrupole modes lasing are observed with high side-mode suppression-ratio of 35 dB and high index sensitivity of 375 nm per refractive index unit, which shows their potential in optical micro-laser and index sensor applications. Over five-fold photoluminescence enhancement with broad band-width of 100 nm from the dipole mode is also observed at room temperature, which shows the advantage of honeycomb lattice structure for designing high brightness light emitting diodes.en_US
dc.language.isoen_USen_US
dc.subjectEnhanced light emissionen_US
dc.subjecthoneycomb photonic crystalen_US
dc.subjectoptical sensoren_US
dc.subjectsemiconductor laseren_US
dc.titleMulti-Functional Light Emitter Based on Band-Edge Modes Near Gamma-Point in Honeycomb Photonic Crystalen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JLT.2011.2142176en_US
dc.identifier.journalJOURNAL OF LIGHTWAVE TECHNOLOGYen_US
dc.citation.volume29en_US
dc.citation.issue12en_US
dc.citation.spage1797en_US
dc.citation.epage1801en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000291319500002-
dc.citation.woscount2-
顯示於類別:期刊論文


文件中的檔案:

  1. 000291319500002.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。