Impact of Electroforming Current on Self-Compliance Resistive Switching in an ITO/Gd:SiOx/TiN Structure

標題:	Impact of Electroforming Current on Self-Compliance Resistive Switching in an ITO/Gd:SiOx/TiN Structure
作者:	Tseng, Hsueh-Chih Chang, Ting-Chang Wu, Yi-Chun Wu, Sei-Wei Huang, Jheng-Jie Chen, Yu-Ting Yang, Jyun-Bao Lin, Tzu-Ping Sze, Simon. M. Tsai, Ming-Jinn Wang, Ying-Lang Chu, Ann-Kuo 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Indium tin oxide (ITO);resistance switching;resistive random access memory (ReRAM);self-built current compliance
公開日期:	1-Jul-2013
摘要:	This letter investigates self-compliance behavior for nonvolatile resistance random access memory using the indium tin oxide (ITO)/Gd:SiOx/TiN structure. Different current compliances in the electroforming process results in different trends in the set process, including a different self-compliance scale and one-or two-step set behaviors. The oxygen ions generated during the electroforming and set process drift to ITO, inducing a semiconductor-like ITO interface formation, which can be regarded as a self-built series resistor.
URI:	http://dx.doi.org/10.1109/LED.2013.2259135 http://hdl.handle.net/11536/22601
ISSN:	0741-3106
DOI:	10.1109/LED.2013.2259135
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	34
Issue:	7
起始頁:	858
結束頁:	860
Appears in Collections:	Articles

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