Localized Lasing Mode in GaN Quasi-Periodic Nanopillars at Room Temperature

Abstract

In this paper, GaN quasi-periodic nanopillars were fabricated and investigated. The quasi-periodic nanopillars were realized by nanoimprint technique and selective area growth. Localized lasing mode was identified in the GaN quasi-periodic nanopillars. The threshold energy density and lasing wavelength were 40 mJ/cm(2) and 369 nm, respectively. The divergence angle and near-field lasing spot were measured to be 10.5 degrees and 3.6 mu m, respectively. The spontaneous emission coupling factor of localized lasing mode was estimated to be 9.4 x 10(-3). The mode patterns in the real and reciprocal spaces were calculated by the multiple scattering method to confirm the mode localization behavior.