標題: Study of Nonpolar GaN/ZnO Heterostructures Grown by Molecular Beam Epitaxy
作者: Chang, Chiao-Yun
Huang, Huei-Min
Lan, Yu-Pin
Lu, Tien-Chang
Tu, Li-Wei
Hsieh, Wen-Feng
光電工程學系
Department of Photonics
公開日期: 1-七月-2013
摘要: The growth mechanism and characteristics of the nonpolar GaN/ZnO heterostructure grown on the r-plane sapphire substrate by using molecular beam epitaxy were studied. The crystal interaction between GaN and ZnO epitaxial layers was clarified by using transmission electron microscopy and X-ray diffraction. A new epitaxial relationship of ZnGa2O4 (220)//GaN (10 (13) over bar) in the normal surface direction was obtained in the GaN/ZnO heterostructure. It was believed that the formation of ZnGa2O4 (220) was due to the recrystallizadon of the ZnO layer with Ga atoms, which in turn resulted in the formation of semipolar-oriented GaN. In addition, the main optical transition in the GaN/ZnO heterostructure was attributed to the existence of the interface states and new ZnO:(Ga,N) alloys.
URI: http://dx.doi.org/10.1021/cg400497r
http://hdl.handle.net/11536/22609
ISSN: 1528-7483
DOI: 10.1021/cg400497r
期刊: CRYSTAL GROWTH & DESIGN
Volume: 13
Issue: 7
起始頁: 3098
結束頁: 3102
顯示於類別:期刊論文