標題: | Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates |
作者: | Chao, Chu-Li Xuan, Rong Yen, Hsi-Hsuan Chiu, Ching-Hsueh Fang, Yen-Hsiang Li, Zhen-Yu Chen, Bo-Chun Lin, Chien-Chung Chiu, Ching-Hua Guo, Yih-Der Kuo, Hao-Chung Chen, Jenn-Fang Cheng, Shun-Jen 光電系統研究所 電子物理學系 光電工程學系 Institute of Photonic System Department of Electrophysics Department of Photonics |
關鍵字: | Droop;freestanding GaN (FS-GaN);homoepitaxially;light-emitting diodes (LEDs) |
公開日期: | 15-六月-2011 |
摘要: | Using a GaN nanorod template in a hydride vapor phase epitaxy (HVPE) system can manufacture a freestanding GaN (FS-GaN) substrate with threading dislocation densities down to similar to 10(7) cm(-2). In this letter, we report InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) grown on this FS-GaN substrate. The defect densities in the homoepitaxially grown LEDs were substantially reduced, leading to improved light emission efficiency. Compared with the LED grown on sapphire, we obtained a lower forward voltage, smaller diode ideality factor, and higher light-output power in the same structure grown on FS-GaN. The external quantum efficiency (EQE) of LEDs grown on FS-GaN were improved especially at high injection current, which brought the efficiency droop phenomenon greatly reduced at high current density. |
URI: | http://dx.doi.org/10.1109/LPT.2011.2134081 http://hdl.handle.net/11536/22617 |
ISSN: | 1041-1135 |
DOI: | 10.1109/LPT.2011.2134081 |
期刊: | IEEE PHOTONICS TECHNOLOGY LETTERS |
Volume: | 23 |
Issue: | 12 |
起始頁: | 798 |
結束頁: | 800 |
顯示於類別: | 期刊論文 |