完整後設資料紀錄
DC 欄位語言
dc.contributor.authorZhang, G. -Y.en_US
dc.contributor.authorZheng, H. -R.en_US
dc.contributor.authorHuang, W. -H.en_US
dc.contributor.authorZhang, X. -Y.en_US
dc.contributor.authorGao, D. -L.en_US
dc.contributor.authorZhang, H.en_US
dc.contributor.authorZhang, P. -X.en_US
dc.contributor.authorTseng, T. -Y.en_US
dc.contributor.authorHabermeier, H. -U.en_US
dc.contributor.authorLin, C. -T.en_US
dc.contributor.authorCheng, H. -H.en_US
dc.date.accessioned2014-12-08T15:32:14Z-
dc.date.available2014-12-08T15:32:14Z-
dc.date.issued2013-11-01en_US
dc.identifier.issn0947-8396en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s00339-013-7652-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/22673-
dc.description.abstractWe have developed a high-performance laser energy meter based on anisotropic Seebeck effect in a strongly correlated electronic (SCE) thin film. SCE thin films, typically represented by high-temperature superconductor (HTS) cuprate and colossal magnetoresistance (CMR) manganite thin films, demonstrate tremendous anisotropic Seebeck effect. In this study, a La2/3Ca1/3MnO3 thin film grown on a tilted LaAlO3 substrate is tested with the fundamental, the second, the third, and the fourth harmonics (1064, 532, 355, 266 nm, respectively) of a Q-switched Nd:YAG laser over a wide range of temperatures from room temperature to 16 K. The peak-value of the laser-induced thermoelectric voltage signal shows a good linear relationship with the laser energy per pulse in the measured wavelength and temperature ranges. The combined advantages over other commercial laser detectors such as nanosecond-order response and spectrally broad and flat response over a wide range of temperatures, in situ real-time measurement, and energy savings, make the device an ideal candidate for next-generation laser detectors and laser power/energy meters.en_US
dc.language.isoen_USen_US
dc.titleA high-performance laser energy meter based on anisotropic Seebeck effect in a strongly correlated electronic thin filmen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s00339-013-7652-0en_US
dc.identifier.journalAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSINGen_US
dc.citation.volume113en_US
dc.citation.issue2en_US
dc.citation.spage347en_US
dc.citation.epage353en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000325115900015-
dc.citation.woscount1-
顯示於類別:期刊論文


文件中的檔案:

  1. 000325115900015.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。