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dc.contributor.authorLai, Kou-Weien_US
dc.contributor.authorLin, Sheng-Dien_US
dc.contributor.authorLi, Zong-Linen_US
dc.contributor.authorWang, Chi-Chengen_US
dc.date.accessioned2014-12-08T15:32:15Z-
dc.date.available2014-12-08T15:32:15Z-
dc.date.issued2013-10-01en_US
dc.identifier.issn1559-128Xen_US
dc.identifier.urihttp://dx.doi.org/10.1364/AO.52.006906en_US
dc.identifier.urihttp://hdl.handle.net/11536/22684-
dc.description.abstractWe have proposed and fabricated a new mid-infrared reflector using the guided-mode resonance (GMR). The GMR reflector consists of subwavelength Ge grating on GaAs substrate with a low-refractive-index SiOx layer in between. With a total thickness of about 2 mu m, a near-100% reflectivity at 8 mu m has been obtained both theoretically and experimentally. (C) 2013 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleLong-wavelength mid-infrared reflectors using guided-mode resonanceen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/AO.52.006906en_US
dc.identifier.journalAPPLIED OPTICSen_US
dc.citation.volume52en_US
dc.citation.issue28en_US
dc.citation.spage6906en_US
dc.citation.epage6918en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000325216900007-
dc.citation.woscount0-
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