完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tsai, Wan-Lin | en_US |
dc.contributor.author | Huang, Bai-Tao | en_US |
dc.contributor.author | Yang, Po-Yu | en_US |
dc.contributor.author | Wang, Kuang-Yu | en_US |
dc.contributor.author | Hsiao, Ching | en_US |
dc.contributor.author | Cheng, Huang-Chung | en_US |
dc.date.accessioned | 2014-12-08T15:32:16Z | - |
dc.date.available | 2014-12-08T15:32:16Z | - |
dc.date.issued | 2013-10-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2013.2278214 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22693 | - |
dc.description.abstract | High-performance pH sening membranes of extended-gate field-effect transistors (EGFETs) composed only of oxygen-plasma-functionalized carbon nanotube thin films (CNTFs) are demonstrated. A large number of oxygen-containing functional groups are decorated on the sidewalls of carbon nanotubes (CNTs) after the oxygen plasma treatment. These functional groups act as the sensing sites and accurately respond to the ions of interest in different pH levels. Therefore, these functionalized CNTFs as the pH-EGFET sensing membranes can achieve a high voltage sensitivity of 56.8 mV/pH, a large voltage linearity of 0.9995, and a wide sensing range of pH 1-13. In addition, the oxygen-plasma-functionalized CNTFs also exhibit superior reliability with a small hysteresis voltage of 4.98 mV. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Carbon nanotube thin film (CNTF) | en_US |
dc.subject | extended-gate field-effect transistor (EGFET) | en_US |
dc.subject | sensor | en_US |
dc.title | Oxygen Plasma Functionalized Multiwalled Carbon Nanotube Thin Film as A pH Sensing Membrane of Extended-Gate Field-Effect Transistor | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2013.2278214 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 34 | en_US |
dc.citation.issue | 10 | en_US |
dc.citation.spage | 1307 | en_US |
dc.citation.epage | 1309 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000325186600034 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |