Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shih, Ching-I | en_US |
dc.contributor.author | Lin, Chien-Hung | en_US |
dc.contributor.author | Lin, Shin-Chin | en_US |
dc.contributor.author | Lin, Ta-Chun | en_US |
dc.contributor.author | Sun, Kien Wen | en_US |
dc.contributor.author | Voskoboynikov, Oleksandr (Alex) | en_US |
dc.contributor.author | Lee, Chien-Ping | en_US |
dc.contributor.author | Suen, Yuen-Wuu | en_US |
dc.date.accessioned | 2014-12-08T15:32:35Z | - |
dc.date.available | 2014-12-08T15:32:35Z | - |
dc.date.issued | 2011-06-02 | en_US |
dc.identifier.issn | 1931-7573 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1186/1556-276X-6-409 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22803 | - |
dc.description.abstract | In this report, the influence of the intrinsic transitions between bound-to-delocalized states (crossed states or quasicontinuous density of electron-hole states) on photoluminescence excitation (PLE) spectra of InAs quantum dots (QDs) was investigated. The InAs QDs were different in size, shape, and number of bound states. Results from the PLE spectroscopy at low temperature and under a high magnetic field (up to 14 T) were compared. Our findings show that the profile of the PLE resonances associated with the bound transitions disintegrated and broadened. This was attributed to the coupling of the localized QD excited states to the crossed states and scattering of longitudinal acoustical (LA) phonons. The degree of spectral linewidth broadening was larger for the excited state in smaller QDs because of the higher crossed joint density of states and scattering rate. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1186/1556-276X-6-409 | en_US |
dc.identifier.journal | NANOSCALE RESEARCH LETTERS | en_US |
dc.citation.volume | 6 | en_US |
dc.citation.issue | en_US | |
dc.citation.epage | en_US | |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000292296100003 | - |
dc.citation.woscount | 4 | - |
Appears in Collections: | Articles |
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