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dc.contributor.authorShih, Ching-Ien_US
dc.contributor.authorLin, Chien-Hungen_US
dc.contributor.authorLin, Shin-Chinen_US
dc.contributor.authorLin, Ta-Chunen_US
dc.contributor.authorSun, Kien Wenen_US
dc.contributor.authorVoskoboynikov, Oleksandr (Alex)en_US
dc.contributor.authorLee, Chien-Pingen_US
dc.contributor.authorSuen, Yuen-Wuuen_US
dc.date.accessioned2014-12-08T15:32:35Z-
dc.date.available2014-12-08T15:32:35Z-
dc.date.issued2011-06-02en_US
dc.identifier.issn1931-7573en_US
dc.identifier.urihttp://dx.doi.org/10.1186/1556-276X-6-409en_US
dc.identifier.urihttp://hdl.handle.net/11536/22803-
dc.description.abstractIn this report, the influence of the intrinsic transitions between bound-to-delocalized states (crossed states or quasicontinuous density of electron-hole states) on photoluminescence excitation (PLE) spectra of InAs quantum dots (QDs) was investigated. The InAs QDs were different in size, shape, and number of bound states. Results from the PLE spectroscopy at low temperature and under a high magnetic field (up to 14 T) were compared. Our findings show that the profile of the PLE resonances associated with the bound transitions disintegrated and broadened. This was attributed to the coupling of the localized QD excited states to the crossed states and scattering of longitudinal acoustical (LA) phonons. The degree of spectral linewidth broadening was larger for the excited state in smaller QDs because of the higher crossed joint density of states and scattering rate.en_US
dc.language.isoen_USen_US
dc.titleEffects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1186/1556-276X-6-409en_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.citation.volume6en_US
dc.citation.issueen_US
dc.citation.epageen_US
dc.contributor.department應用化學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000292296100003-
dc.citation.woscount4-
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