統計資料
總造訪次數
| 檢視 | |
|---|---|
| CHARACTERIZATION OF THE SI/SIGE HETEROJUNCTION DIODE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION | 108 |
本月總瀏覽
| 六月 2025 | 七月 2025 | 八月 2025 | 九月 2025 | 十月 2025 | 十一月 2025 | 十二月 2025 | |
|---|---|---|---|---|---|---|---|
| CHARACTERIZATION OF THE SI/SIGE HETEROJUNCTION DIODE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION | 0 | 0 | 0 | 0 | 1 | 0 | 0 |
檔案下載
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國家瀏覽排行
| 檢視 | |
|---|---|
| China | 98 |
| United States | 6 |
| Canada | 1 |
| Ireland | 1 |
縣市瀏覽排行
| 檢視 | |
|---|---|
| Shenzhen | 96 |
| Kensington | 4 |
| Beijing | 1 |
| Edmond | 1 |
| Menlo Park | 1 |
| Nanning | 1 |
| Ottawa | 1 |