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dc.contributor.authorChiu, Shao-Chienen_US
dc.contributor.authorJhang, Jia-Sinen_US
dc.contributor.authorChen, Jenn-Fangen_US
dc.contributor.authorFang, Jiyeen_US
dc.contributor.authorJian, Wen-Binen_US
dc.date.accessioned2014-12-08T15:32:39Z-
dc.date.available2014-12-08T15:32:39Z-
dc.date.issued2013en_US
dc.identifier.issn1463-9076en_US
dc.identifier.urihttp://hdl.handle.net/11536/22824-
dc.identifier.urihttp://dx.doi.org/10.1039/c3cp52083hen_US
dc.description.abstractOctahedral PbSe colloidal nanocrystals (NCs) are used to assemble a solid. Because of the special feature of the apexes of the octahedrons, the cross-sectional area of the inter-dot tunneling junctions is much smaller than that formed between spherical NCs. The inter-dot separation between NCs is easily adjusted by mild thermal treatment. Like a spherical NC-solid, the resistance of the octahedral NC-solid is exponentially dependent on the inter-dot separation. On the contrary, due to the difference in the cross-sectional area between the NCs, electron transport in the octahedral NC-solid does not follow the same model used for the explanation of electron transport in a spherical NC-solid. Through analyses of current-voltage and resistance-temperature behaviors, we have confirmed that the model of fluctuation-induced tunneling conduction fits very well with all of the data and explains the variation in the electrical properties of octahedral PbSe colloidal NC-solids after thermal annealing.en_US
dc.language.isoen_USen_US
dc.titleEffects of cross-sectional area on the tunneling-junction array in octahedral PbSe colloidal-nanocrystal solidsen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c3cp52083hen_US
dc.identifier.journalPHYSICAL CHEMISTRY CHEMICAL PHYSICSen_US
dc.citation.volume15en_US
dc.citation.issue38en_US
dc.citation.spage16127en_US
dc.citation.epage16131en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000324412300053-
dc.citation.woscount1-
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