完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chiu, Shao-Chien | en_US |
dc.contributor.author | Jhang, Jia-Sin | en_US |
dc.contributor.author | Chen, Jenn-Fang | en_US |
dc.contributor.author | Fang, Jiye | en_US |
dc.contributor.author | Jian, Wen-Bin | en_US |
dc.date.accessioned | 2014-12-08T15:32:39Z | - |
dc.date.available | 2014-12-08T15:32:39Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.issn | 1463-9076 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22824 | - |
dc.identifier.uri | http://dx.doi.org/10.1039/c3cp52083h | en_US |
dc.description.abstract | Octahedral PbSe colloidal nanocrystals (NCs) are used to assemble a solid. Because of the special feature of the apexes of the octahedrons, the cross-sectional area of the inter-dot tunneling junctions is much smaller than that formed between spherical NCs. The inter-dot separation between NCs is easily adjusted by mild thermal treatment. Like a spherical NC-solid, the resistance of the octahedral NC-solid is exponentially dependent on the inter-dot separation. On the contrary, due to the difference in the cross-sectional area between the NCs, electron transport in the octahedral NC-solid does not follow the same model used for the explanation of electron transport in a spherical NC-solid. Through analyses of current-voltage and resistance-temperature behaviors, we have confirmed that the model of fluctuation-induced tunneling conduction fits very well with all of the data and explains the variation in the electrical properties of octahedral PbSe colloidal NC-solids after thermal annealing. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Effects of cross-sectional area on the tunneling-junction array in octahedral PbSe colloidal-nanocrystal solids | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1039/c3cp52083h | en_US |
dc.identifier.journal | PHYSICAL CHEMISTRY CHEMICAL PHYSICS | en_US |
dc.citation.volume | 15 | en_US |
dc.citation.issue | 38 | en_US |
dc.citation.spage | 16127 | en_US |
dc.citation.epage | 16131 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000324412300053 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |