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dc.contributor.authorCHIN, Aen_US
dc.contributor.authorHSIEH, KYen_US
dc.contributor.authorLIN, HYen_US
dc.date.accessioned2014-12-08T15:03:44Z-
dc.date.available2014-12-08T15:03:44Z-
dc.date.issued1994-10-10en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.112817en_US
dc.identifier.urihttp://hdl.handle.net/11536/2284-
dc.description.abstractLong range composition ordering and spontaneous formation of Al rich and Ga rich AlxGa1-xAs/AlyGa1-yAs superlattice were demonstrated. This was observed by cross-sectional transmission electron microscopy (TEM) in a 280 angstrom Al0.4GaAs quantum well laser diode heterostructure with Al0.7GaAs barriers grown on (111)B GaAs substrates. On the contrary, none of above superstructure was observed by TEM on a side-by-side grown (100) oriented substrate. More evidence is shown in the (111)B Al0.7GaAs barriers which were disordered due to a high growth temperature and did not show any superstructure. 10 K photoluminescence was shown with 32 meV redshift and a 12-times peak intensity enhancement in (111)B orientation. (C) 1994 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleSPONTANEOUS FORMATION OF AL RICH AND GA RICH ALXGA1-XAS/ALYGA1-YAS SUPERLATTICE AND STRONG ENHANCEMENT OF OPTICAL-PROPERTIESen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.112817en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume65en_US
dc.citation.issue15en_US
dc.citation.spage1921en_US
dc.citation.epage1923en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994PM78400021-
dc.citation.woscount9-
Appears in Collections:Articles