| 標題: | On the Potential of CRS, 1D1R, and 1S1R Crossbar RRAM for Storage-Class Memory |
| 作者: | Lo, Chun-Li Chen, Mei-Chin Huang, Jiun-Jia Hou, Tuo-Hung 電子物理學系 Department of Electrophysics |
| 公開日期: | 2013 |
| URI: | http://hdl.handle.net/11536/22859 |
| ISBN: | 978-1-4673-3082-4 |
| ISSN: | 1524-766X |
| 期刊: | 2013 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA) |
| 顯示於類別： | 會議論文 |
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- Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector-One Resistor Crossbar Array / Lo, Chun-Li;Hou, Tuo-Hung;Chen, Mei-Chin;Huang, Jiun-Jia
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- Bipolar Ni/TiO2/HfO2/Ni RRAM With Multilevel States and Self-Rectifying Characteristics / Hsu, Chung-Wei;Hou, Tuo-Hung;Chen, Mei-Chin;Wang, I-Ting;Lo, Chun-Li
- Observation of Resistive Switching Behavior in Crossbar Core-Shell Ni/NiO Nanowires Memristor / Ting, Yi-Hsin;Chen, Jui-Yuan;Huang, Chun-Wei;Huang, Ting-Kai;Hsieh, Cheng-Yu
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