On the Potential of CRS, 1D1R, and 1S1R Crossbar RRAM for Storage-Class Memory

Full metadata record

DC Field	Value	Language
dc.contributor.author	Lo, Chun-Li	en_US
dc.contributor.author	Chen, Mei-Chin	en_US
dc.contributor.author	Huang, Jiun-Jia	en_US
dc.contributor.author	Hou, Tuo-Hung	en_US
dc.date.accessioned	2014-12-08T15:32:43Z	-
dc.date.available	2014-12-08T15:32:43Z	-
dc.date.issued	2013	en_US
dc.identifier.isbn	978-1-4673-3082-4	en_US
dc.identifier.issn	1524-766X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/22859	-
dc.language.iso	en_US	en_US
dc.title	On the Potential of CRS, 1D1R, and 1S1R Crossbar RRAM for Storage-Class Memory	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA)	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000326324800015	-
Appears in Collections:	Conferences Paper