Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Li, Hung-Hsien | en_US |
dc.contributor.author | Chen, Kuan-Heng | en_US |
dc.contributor.author | Chiou, Si-Ming | en_US |
dc.contributor.author | Liu, Han-Wen | en_US |
dc.contributor.author | Juan, Chuan-Ping | en_US |
dc.contributor.author | Cheng, Huang-Chung | en_US |
dc.date.accessioned | 2014-12-08T15:32:45Z | - |
dc.date.available | 2014-12-08T15:32:45Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.isbn | 978-1-60768-313-1 | en_US |
dc.identifier.issn | 1938-5862 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22895 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/1.3700917 | en_US |
dc.description.abstract | Coaxial-structured solar cells with different lengths silicon nanowires (SiNWs) fabricated by e-beam lithography and transformer coupled plasma reactive ion etching (TCP-RIE) were demonstrated in this paper. With the intrinsic amorphous silicon thickness of 15 nm and n-layer thickness of 25 nm, the short-current density and the conversion efficiency of the flat film solar cell were 17.58 mA/cm(2) and 3.16 %, respectively. Furthermore, the short-current density increased from 20.75 to 27.90 mA/cm(2) and the conversion efficiency increased from 3.59 to 4.69 % when the silicon nanowires length was increased from 0.5 to 1 mu m. The proposed coaxial-structured solar cells with SiNWs exhibited nearly 48.42 % efficiency enhancement over the plat film solar cell. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Coaxial-Structured Solar Cells with Silicon Nanostructures | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1149/1.3700917 | en_US |
dc.identifier.journal | DIELECTRICS FOR NANOSYSTEMS 5: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING -AND-TUTORIALS IN NANOTECHNOLOGY: MORE THAN MOORE - BEYOND CMOS EMERGING MATERIALS AND DEVICES | en_US |
dc.citation.volume | 45 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 529 | en_US |
dc.citation.epage | 535 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000325405800052 | - |
Appears in Collections: | Conferences Paper |
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