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dc.contributor.authorLi, Hung-Hsienen_US
dc.contributor.authorChen, Kuan-Hengen_US
dc.contributor.authorChiou, Si-Mingen_US
dc.contributor.authorLiu, Han-Wenen_US
dc.contributor.authorJuan, Chuan-Pingen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:32:45Z-
dc.date.available2014-12-08T15:32:45Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-60768-313-1en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://hdl.handle.net/11536/22895-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3700917en_US
dc.description.abstractCoaxial-structured solar cells with different lengths silicon nanowires (SiNWs) fabricated by e-beam lithography and transformer coupled plasma reactive ion etching (TCP-RIE) were demonstrated in this paper. With the intrinsic amorphous silicon thickness of 15 nm and n-layer thickness of 25 nm, the short-current density and the conversion efficiency of the flat film solar cell were 17.58 mA/cm(2) and 3.16 %, respectively. Furthermore, the short-current density increased from 20.75 to 27.90 mA/cm(2) and the conversion efficiency increased from 3.59 to 4.69 % when the silicon nanowires length was increased from 0.5 to 1 mu m. The proposed coaxial-structured solar cells with SiNWs exhibited nearly 48.42 % efficiency enhancement over the plat film solar cell.en_US
dc.language.isoen_USen_US
dc.titleCoaxial-Structured Solar Cells with Silicon Nanostructuresen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/1.3700917en_US
dc.identifier.journalDIELECTRICS FOR NANOSYSTEMS 5: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING -AND-TUTORIALS IN NANOTECHNOLOGY: MORE THAN MOORE - BEYOND CMOS EMERGING MATERIALS AND DEVICESen_US
dc.citation.volume45en_US
dc.citation.issue3en_US
dc.citation.spage529en_US
dc.citation.epage535en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000325405800052-
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