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dc.contributor.authorFu, S. F.en_US
dc.contributor.authorChen, C. Y.en_US
dc.contributor.authorLi, F. W.en_US
dc.contributor.authorHsu, C. H.en_US
dc.contributor.authorChou, W. C.en_US
dc.contributor.authorChang, W. H.en_US
dc.contributor.authorChen, W. K.en_US
dc.contributor.authorKe, W. C.en_US
dc.date.accessioned2014-12-08T15:32:51Z-
dc.date.available2014-12-08T15:32:51Z-
dc.date.issued2013-11-15en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2013.07.030en_US
dc.identifier.urihttp://hdl.handle.net/11536/22929-
dc.description.abstractGood-optical-quality, thick InxGa1-xN films with high In content were grown using a homemade two-heater metal-organic chemical vapor deposition system. By varying the growth temperature, it was Found that the In composition of the InGaN epilayer varied from 18 to 59% as the substrate temperature decreased from 750 to 625 degrees C. Our results show that the optical properties in terms of the emission peak wavelength and linewidth are uniformly distributed throughout the entire 2 in. wafer for the x=0.40 InGaN sample. The resultant mean peak wavelength and FWHM are 808 +/- 6 nm and 229 +/- 18 meV, respectively, at 18 K. In addition, for the InGaN film grown at 625 degrees C, a noticeable decrease in the In composition occurred when the ceiling temperature was >800 degrees C, indicative of the occurrence of parasitic reactions in the gas phase. (C) 2013 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectX-ray diffractionen_US
dc.subjectMetal-organic vapor phase epitaxyen_US
dc.subjectNitridesen_US
dc.subjectSemiconducting indium compoundsen_US
dc.titleGrowth of optical-quality, uniform In-rich InGaN films using two-heater metal-organic chemical vapor depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jcrysgro.2013.07.030en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume383en_US
dc.citation.issueen_US
dc.citation.spage106en_US
dc.citation.epage111en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000326049000018-
dc.citation.woscount2-
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