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dc.contributor.authorChen, Chun-Nanen_US
dc.contributor.authorSu, Wei-Longen_US
dc.contributor.authorLee, Meng-Enen_US
dc.contributor.authorJen, Jen-Yien_US
dc.contributor.authorLi, Yimingen_US
dc.date.accessioned2014-12-08T15:32:56Z-
dc.date.available2014-12-08T15:32:56Z-
dc.date.issued2011-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.50.060201en_US
dc.identifier.urihttp://hdl.handle.net/11536/22968-
dc.description.abstractA theoretical method for the calculation of quantum transport in an ellipsoidal valley is presented. This method is developed using a non-equilibrium Green's function framework. Importantly, it is instructive that k(z) is separated into two parts so that the wrong figure shape of the transmission coefficients does not exist. The L-electron effect on AlAs-GaAs-AlAs double barrier structures oriented in the [001], [111], and [110] growth directions is explored using the proposed method. (C) 2011 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleGeneral Expressions for Ellipsoidal-Valley Quantum Transport in Arbitrary Growth Direction: Non-Equilibrium Green's Functionen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.50.060201en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume50en_US
dc.citation.issue6en_US
dc.citation.epageen_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000291741800001-
dc.citation.woscount2-
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